AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF+EM-MoM

Paper TF+EM-MoM7
Preparation and Characterization of Transparent Conducting ZnTe:Cu Back Contact Interface Layer for CdS/CdTe Solar Cell

Monday, October 31, 2005, 10:20 am, Room 306

Session: Thin Films for Photovoltaic and Energy Applications
Presenter: N.G. Dhere, University of Central Florida
Authors: U. Avachat, University of Central Florida
N.G. Dhere, University of Central Florida
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This paper presents preparation and characterization of transparent conducting ZnTe:Cu back contact interface layer for CdS/CdTe thin film solar cells for multijunction thin film PV applications. Polycrystalline ZnTe:Cu thin films were grown by Hot Wall Vacuum Evaporation technique. Hot wall set up was developed to obtain highly stoichiometric films with better material yield and thickness uniformity. 500 nm ZnTe:Cu films were prepared on glass and characterized for stoichiometry, structural properties and optical transparency by electron probe microanalysis, optical transmission spectroscopy and X-ray diffraction technique respectively. Highly stoichiometric ZnTe:Cu films were obtained on glass with optical transparency in the range of 70-80 % in near IR region. X-ray diffraction patterns revealed face-centered cubic phase of ZnTe with preferred {111} orientation. CdS/CdTe solar cells were completed with configuration, CdS/CdTe/ZnTe:Cu/ZnO:Al/Ni-Al and CdS/CdTe/ZnTe:Cu/ITO/Ni-Al. ZnO:Al and ITO thin film layers were deposited by RF magnetron sputtering and Ni-Al contact fingers were deposited by e-beam vacuum evaporation through metallic mask. Completed CdS/CdTe solar cells were characterized for their I-V characteristics using current voltage measurements.