AVS 52nd International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP26
Thermal Stability of Nikel Silicide Layer on Si, Relaxed-SiGe/Si, Strained-Si/relaxed-SiGe/Si Heterostructure

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Surface Science Poster Session
Presenter: J.H. Ko, Sungkyunkwan University, Korea
Authors: J.H. Ko, Sungkyunkwan University, Korea
C.H. Jang, Sungkyunkwan University, Korea
S.H. Kim, Electronics and Telecommunications Research Institute, Korea
Y.-J. Song, Electronics and Telecommunications Research Institute, Korea
N.-E. Lee, Sungkyunkwan University, Korea
Correspondent: Click to Email
MOSFET device utilizing a strained-Si channel on relaxed SiGe buffer layer is one of the most promising structure for the next-generation CMOS integration scheme below 50 nm technology node because of its high channel mobilities compared to bulk Si and compatibility with conventional Si CMOS processes. Rapid thermal annealing was performed at 400 °C and then post thermal annealing was performed at of 600~800 °C as following process. Nickel silicide was formed on strained-Si/relaxed-SiGe/Si (001) and relaxed-SiGe/Si (001) and Si (001) using a sacrificial strained-Si layer and its morphological characteristics were investigated. Nickel silicide layers were grown by rapid thermal annealing of the samples with the structure of Ni (10.92 nm)/strained-Si (20 nm)/relaxed-SiGe/Si (001) at the annealing temperature (TA) range of 400~800 °C. And we deposited Ni at each 11nm and 21nm to know what is different. When we deposited 11nm Ni that it's interface roughness very bad but 21nm Ni deposited whose interface roughness improved. The phase formation, surface and interfacial morphologies, and electrical properties of the resulting sample were characterized by various measurement technique, including X-ray diffraction, scanning electron microscopy, cross-sectional transmission electron microscopy and the four-point probe method. As the result when we measured sheet resistance Ni 11 nm on strained-Si/relaxed-SiGe/Si (001) and relaxed-SiGe/Si (001) and Si (001) it were determined to be 9.778, 11.083, 8.464 @ohm@/sq. at 400 °C and it were determined 4.428, 5.453, 4.715 @ohm@/sq. at 400 °C 21 nm. Sheet resistance were determined 160.98, 78.79, 138.633 and 92.397, 65.857, 146.875 @ohm@/sq. at 800 °C 11nm and 800 °C 21 nm, respectively