AVS 52nd International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP25
Stress-induced Transformation between Si(5 5 12)-2x1 and Si(7 7 17)-2x1

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Surface Science Poster Session
Presenter: J.M. Seo, Chonbuk National University, Korea
Authors: S. Cho, Chonbuk National University, Korea
J.M. Seo, Chonbuk National University, Korea
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From the reconstructed Si(5 5 12)-2x1, the area of locally-converted Si(7 7 17)-2x1 has been detected by scanning tunneling microscopy(STM). The atomic structure of Si(7 7 17)-2x1 has turned out to be the same as that of Si(5 5 12)-2x1 with missing one of (337) sections, namely D(337) with a dimer-facing-adatom(D/A) row. In this structural transformation from (5 5 12) to (7 7 17), neither the number of atoms nor the dangling-bond number changes, but the surface atoms simply rebond under the external stress originating from the (113) facet parallel to 1-D row. By the distribution of (7 7 17) domain, the direction and size of compressive surface-stress on Si(5 5 12)-2x1 can be deduced, implying that (7 7 17) can be utilized as a stress-indicator of nanometer scale on (5 5 12).