AVS 52nd International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP20
Water Etching of Hydrogen-Terminated Si(100): Implications for Oxidation

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Surface Science Poster Session
Presenter: S.K. Green, Smith College
Authors: S.K. Green, Smith College
M.F. Faggin, Cornell University
M.A. Hines, Cornell University
K.T. Queeney, Smith College
Correspondent: Click to Email
While it has been known for some time that deoxygenated H@sub 2@O will etch hydrogen-terminated Si(100), our recent work shows that this etching generates a surface of surprising homogeneity. Transmission infrared spectroscopy is used both to examine the mechanism of this etching process and to decipher the surface termination of the structures formed. Analysis of both the stretching and bending modes of SiH@sub x@ species reveals characteristic {100} and {111} facets that can be related to structures formed on extended (100) and (111) surfaces. Selective isotopic labeling reveals that the initial, H-terminated surface is completely removed within 10 minutes' immersion in room-temperature, deoxygenated H@sub 2@O. The rate of this reaction is therefore fast compared to the rate of oxidation of H:Si(100) by O@sub 2(aq)@ that is normally present in air-equilibrated H@sub 2@O, making the etching process a critical factor in the oxidation of Si(100) in neutral or basic aqueous solutions.