AVS 52nd International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP13
Low Temperature Decomposition of Triethylsilane on Si(100) by Electron Irradiation

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Surface Science Poster Session
Presenter: J. Lozano, Bradley University
Authors: J. Lozano, Bradley University
D. Early, Bradley University
L. Bockewitz, Bradley University
P. Petrany, Bradley University
J.H. Craig, Jr., Bradley University
P.W. Wang, Bradley University
K.R. Kimberlin, Bradley University
Correspondent: Click to Email
Electron-induced decomposition of triethylsilane (TES) on Si(100) at 100K was studied using temperature programmed desorption (TPD), high resolution electron energy loss spectroscopy (HREELS), electron stimulated desorption (ESD), and x-ray photoelectron spectroscopy (XPS). Si(100) samples were dosed with TES and then irradiated with 600-eV electrons for 5 minutes. During electron irradiation, ESD of neutral particles was monitored. Only a small hydrogen ESD signal was detected at all TES coverages. Following electron irradiation of multilayer TES/Si(100), TPD data exhibited decreased desorption of physisorbed species and a dramatic increase in mass 2, 27, and 59 desorption, compared to TPD from un-irradiated surfaces. This indicates that electron irradiation resulted in decomposition of TES and deposition of large fragments on the surface. Fragmentation of TES by electron irradiation was studied by obtaining HREELS and XPS data following sequential thermal anneals of the electron-irradiated surface to increasing temperatures.