This presentation is a review of the materials research on M@sub n+1@AX@sub n@ (n=1 to 3) phase thin films. We have deposited epitaxial films from the Ti-Si-C, Ti-Ge-C, and Ti-Sn-C as well as Ti-Al-N systems on Al@sub 2@O@sub 3@(0001) or MgO(111) substrates at temperatures of 700-1000C employing DC magnetron sputtering. This was done using mainly growth from elemental sources, but also demonstrating single source deposition from compound targets. We report single-crystal growth of the previously known phases Ti@sub 3@SiC@sub 2@, Ti@sub 3@GeC@sub 2@, Ti@sub 2@GeC, Ti@sub 2@SnC and Ti@sub 2@AlN, and the discoveries of two phases Ti@sub 4@SiC@sub 3@ and Ti@sub 4@GeC@sub 3@ as well as intergrown structures of stoichiometries Ti@sub 5@A@sub 2@C@sub 3@ and Ti@sub 7@A@sub 2@C@sub 5@ in the Si and Ge systems. Characterization studies will be reported using XRD, TEM, four-point (resistivity) probe, and nanoindentation. Comparison will also be made with the phase composition in nanocomposite M-A-X films forming during deposition at reduced temperature.