AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Monday Sessions
       Session NS1-MoM

Paper NS1-MoM4
Fabrication of Defect-free Sub-10nm Si Nanocolumn using Cl Neutral Beam

Monday, October 31, 2005, 9:20 am, Room 204

Session: Nanometer Scale Structures
Presenter: J.K. Chen, Tohoku University, Japan
Authors: J.K. Chen, Tohoku University, Japan
T. Kubota, Tohoku University, Japan
U. Uraoka, Nara Institute of Science and Technology, Japan
T. Fuyuki, Nara Institute of Science and Technology, Japan
I. Yamashita, Matsushita Electric Industrial Co., Ltd., Japan
S. Samukawa, Tohoku University, Japan
Correspondent: Click to Email
We fabricated nanocolumn structure by using a low energy Cl neutral beam and a ferritin iron-core mask. By optimizing beam accelerated energy, extremely high etching selectivity of Si to ferritin iron core masks as well as highly anisotropic etching profile could be realized. As a result, the diameter of the Si nanocolumn structure was 7 nm, which was identical to that of the iron core in the ferritin. We were also able to achieve an extremely high aspect ratio of about 19 (hight: 130nm) with maintaining the diameter of 7nm. Additionally, the crystal defects of 7nm Si nanocolumn were observed by using TEM images. We found that defect-free Si nanocolumn etching could be accomplished by using the Cl neutral beam. It is much difficult for conventional plasma etching processes to fabricate such fine structure, because the high-energy photons in the plasma cause low etching selectivity to the iron core mask and generate crystal defects in the silicon.