AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Monday Sessions
       Session NS1-MoM

Paper NS1-MoM10
Comparative Study of ZnO Nanorods Grown by MOCVD and Solution Method

Monday, October 31, 2005, 11:20 am, Room 204

Session: Nanometer Scale Structures
Presenter: Y. Tak, POSTECH, Korea
Authors: Y. Tak, POSTECH, Korea
K. Yong, POSTECH, Korea
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ZnO nanomaterials have been intensively studied due to their characteristic properties and possible applications in nano-device fabrication. Various synthesis techniques of ZnO nanomaterials have been developed such as vapor liquid solid (VLS) method, metalorganic chemical vapor deposition (MOCVD), physical vapor deposition (PVD) and solution method. Among these methods, MOCVD and solution method can be easily applicable to low temperature process. We report on the comparative study regarding characteristics of ZnO nanorods grown by MOCVD and solution method, respectively. For MOCVD growth of ZnO nanorods on silicon, diethylzinc(DEZn) and oxygen were used as reactants. The growth temperature was 400 ~ 500@super o@C and thin ZnO layer was used as a buffer layer. For solution method, Zn or ZnO coated silicon substrate was placed in a solution containing Zn(NO@sub 3@)@sub 2@ and hexamethylenetetramine (HMT) or ammonia water. The reaction temperature and time were 60 ~ 90 @super o@C and 6h, respectively. Large quantities of well-aligned ZnO nanorod could be prepared by both MOCVD and solution method. The morphology and crystallinity of the samples grown by two different methods were compared using field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction spectroscopy (XRD). High-resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze atomic structures and element composition. Photoluminescence properties of the samples were compared using He-Cd (325nm wavelength) laser as an excitation source.