Silicon has certain unusual properties, including a spin-0 nuclear isotope, that make quantum dots in this material excellent candidates for quantum information processing. Silicon can also form spectacular membranes, one hundred nanometers thick and centimeters across. Such silicon nanomembranes bend and flex like plastic sandwich wrap but retain their single crystal electronic properties. I will present results on silicon quantum dots fabricated using both Schottky gates and Atomic-Layer-Deposition MOS gates on Si/SiGe modulation-doped heterostructures. These dots have excellent charge stability, but their fabrication currently requires special processing. I also will present recent results on silicon nanomembranes, a material that retains the excellent intrinsic properties of silicon, but that can be bent, strained, and rolled into tubes. These properties offer the potential to use strain in a defect-free system, potentially leading to new ways to create quantum dots with few end-processing complexities. X-ray scattering, TEM, and low temperature electronic transport measurements will be presented, and the prospects for meaningful application of such membranes will be discussed. Work performed in collaboration with L.J. Klein, K.L.M. Lewis, K.A. Slinker, L. McGuire, Srijit Goswami, W. Peng, C. Haselby, D.W. van der Weide, R.H. Blick, S.N. Coppersmith, R. Joynt, Mark Friesen, M.M. Roberts, D. Savage, M.G. Lagally (University of Wisconsin-Madison) and J.O. Chu (IBM Watson).