AVS 52nd International Symposium
    Electronic Materials and Processing Friday Sessions
       Session EM-FrM

Paper EM-FrM7
Optical and Electrical Properties of a New N-type Semiconductor: N, N@super '@-bis (3-phenoxy-3-phenoxy-phenoxy)-1,4,5,8-naphthalenetetracarboxylic diimide

Friday, November 4, 2005, 10:20 am, Room 309

Session: Organic Electronic Devices
Presenter: D.X. Yang, University of North Carolina-Chapel Hill
Authors: D.X. Yang, University of North Carolina-Chapel Hill
R.P. Shrestha, University of North Carolina-Chapel Hill
T.J. Dingemans, Delft University of Technology, The Netherlands
E.T. Samulski, University of North Carolina-Chapel Hill
E.A. Irene, University of North Carolina-Chapel Hill
Correspondent: Click to Email
Optical properties of N, N@super '@-bis (3-phenoxy-3-phenoxy-phenoxy)-1,4,5,8-naphthalenetetracarboxylic diimide (NDA-n2) thin film, a N-type organic semiconductor, were investigated using optical transmission and spectroscopic ellipsometry (SE) in the visible-near uv optical range. The dispersion in refractive index and extinction coefficient along with anisotropy, surface roughness and annealing results are reported. An oscillator model with one Tauc-Lorzentzian oscillator and four Gaussian oscillators was proposed to describe the dielectric function of NDA-n2. Vacuum annealing of the thin film was performed and monitored using in-situ SE. The films we stable up to 150 °C and no optical anisotropy was found for the films. Capacitance versus voltage (C-V) and current versus voltage (I-V) measurements were performed on capacitor and thin film transistor (TFT) structures, respectively. The C-V results indicate a value of about 3.4 for the static dielectric constant. The I-V yields TFT transfer characteristics that are used to optimize the film formation process and device performance of the thin film semiconductor for TFT@super '@s. The mobility of NDA-n2 was obtained from I-V results in a TFT structure.