AVS 52nd International Symposium
    Electronic Materials and Processing Monday Sessions
       Session EM+NS-MoM

Invited Paper EM+NS-MoM1
Halide Chemical Vapor Deposition of SiC Crystals

Monday, October 31, 2005, 8:20 am, Room 310

Session: Novel Approaches in Wide Bandgap Semiconductors
Presenter: M. Skowronski, Carnegie Mellon University
Authors: M. Skowronski, Carnegie Mellon University
A.Y. Polyakov, Carnegie Mellon University
H.J. Chung, Carnegie Mellon University
S. Nigam, Carnegie Mellon University
S.W. Huh, Carnegie Mellon University
M.A. Fanton, Pennsylvania State University
Correspondent: Click to Email
A novel approach to the high growth rate deposition of silicon carbide single crystals and layers is described. The Halide Chemical Vapor Deposition (HCVD) process uses tetrachlorosilane, propane, and hydrogen as reactants . The use of halogenated Si source and separate injection of Si and C precursors allows for preheating the source gases up to the growth temperature (2300 K) without causing premature chemical reactions. This is a distinct advantage over approaches employing silane as the Si precursor. The stoichiometry of HCVD crystals can be controlled by changing the C/Si flow ratio and can be kept constant throughout growth, in contrast to the Physical Vapor Transport technique. HCVD allows for growth of high crystalline quality, very high purity 4H- and 6H-SiC crystals with growth rates in 0.1-0.3 mm/hr. The densities of deep electron and hole traps are determined by growth temperature and C/Si ratio and can be as low as that found in standard CVD epitaxy. At high C/Si flow ratio, the resistivity of HCVD crystals exceeds 1E5 Ohm cm. The properties of crystals grown by HCVD make an attractive method for applications in high-frequency and/or high voltage devices.