AVS 51st International Symposium | |
Thin Films | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | TF-ThM1 Evolution of Surface Morphology during Thin Film Growth by Hot-Wire CVD: Short-Range Smoothening and Long-Range Roughening B.A. Sperling, J.R. Abelson, University of Illinois at Urbana-Champaign |
8:40am | TF-ThM2 Atomic-Scale Analysis of SiH@sub 3@ and H Surface Diffusion on Plasma-Deposited Amorphous Silicon Thin Films M.S. Valipa, University of California, Santa Barbara, T. Bakos, University of Massachusetts, Amherst, E.S. Aydil, University of California Santa Barbara, D. Maroudas, University of Massachusetts, Amherst |
9:00am | TF-ThM3 Substrate Temperature Dependence of the Roughness Evolution of Hot-wire Deposited a-Si:H Studied by Real-Time Spectroscopic Ellipsometry and Atomic Force Microscopy W.M.M. Kessels, J.P.M. Hoefnagels, E. Langereis, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands |
9:20am | TF-ThM4 A Self-Consistent Prediction of a Deposition of Cu Sputtered in a rf Magnetron Plasma T.Y. Yagisawa, T.M. Mine, S.K. Kuroiwa, T.M. Makabe, Keio University, Japan |
9:40am | TF-ThM5 Invited Paper Effects of Steering and Shadowing in Epitaxial Growth J.G. Amar, University of Toledo |
10:20am | TF-ThM7 Inhomogeneous Transport of Energetic and Thermalized Neutrals in a Magnetron Sputter System F.J. Jimenez, University of Alberta, Canada, S. Leonard, Matrikon, Canada, P. Beatty, S. Dew, University of Alberta, Canada |
10:40am | TF-ThM8 A Target Material Pathways Model for High Power Pulsed Magnetron Sputtering D.J. Christie, Advanced Energy Industries, Inc. |
11:00am | TF-ThM9 Complex Target Poisoning Effects in Reactive Sputtering D. Rosen, O. Kappertz, T. Nyberg, I. Katardjiev, S. Berg, Uppsala University, Sweden |
11:20am | TF-ThM10 Process Parameter - Film Structure/Optical Property Study of Reactive Sputter Deposited Hafnium Dioxide E. Hoppe, C.R. Aita, University of Wisconsin-Milwaukee |
11:40am | TF-ThM11 Integrated Modeling of Al@sub 2@O@sub 3@ Atomic Layer Deposition H. Simka, D. Thakurta, S. Shankar, Intel Corp. |