AVS 51st International Symposium | |
Surface Science | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | SS3-ThM1 Invited Paper Ultra-Low Coverage Spontaneous Etching and Hyperthermal Desorption of Aluminum Chlorides from Cl2/Al(111) A.C. Kummel, T.J. Grassman, G.C. Poon, University of California, San Diego |
9:00am | SS3-ThM3 Real-time and In-situ Surface Stress and STM Measurements and their Application to Halogen Etching of Silicon Surfaces T. Narushima, N. Kinahan, J.J. Boland, Trinity College Dublin, Ireland |
9:20am | SS3-ThM4 Chemically Assisted Ion Beam Etching of GaAs by Argon and Chlorine Gases: Experimental and Simulation Investigations A. Rhallabi, University of Nantes, France, M. Gaillard, Veeco, France, L. Elmonser, IMN-LPCM, France, G. Marcos, LPCM-IMN, France, A. Talneau, LPN-CNRS, France, F. Pommereau, OPTO+, France, P. Pagnod, University of Nantes, France, J.P. Landesman, LPCM-IMN, France, N. Bouadma, France Telecom |
9:40am | SS3-ThM5 Semiconductor Surface Chemical Functionalization for Microelectronics Applications: Gas Phase Chlorination of H-Passivated Silicon Surfaces S. Rivillon, F. Amy, Y.J. Chabal, Rutgers University, M.M. Frank, IBM |
10:00am | SS3-ThM6 Charge-Carrier-Stimulated Halogen Desorption from Si(100)-(2x1) B.R. Trenhaile, G.J. Xu, A. Agrawal, A.W. Signor, K.S. Nakayama, J.H. Weaver, University of Illinois at Urbana-Champaign |
10:20am | SS3-ThM7 Morphological Evolution during Competitive Etching and Oxidation of Vicinal Si(100) Surfaces M.A. Albao, D.-J. Liu, J.W. Evans, Iowa State University |
10:40am | SS3-ThM8 Atomic Oxygen Etching of Phosphorous-containing Polymer Surfaces H. Fairbrother, G. Wolfe, J. Torres, Johns Hopkins University |
11:00am | SS3-ThM9 Structural Damage of Self-Assembled Monolayers Induced by 5-eV O@super +@ Bombardment T.D. Tzvetkov, X. Qin, D.C. Jacobs, University of Notre Dame |
11:20am | SS3-ThM10 In-situ STM-studies of Solid/Liquid Interfaces:Growth of Ultrathin Compound Films A. Spaenig, S. Huemann, J. Hommrich, P. Broekmann, K. Wandelt, University of Bonn, Germany |