| AVS 51st International Symposium | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 1:20pm | EM-TuA1 Spectroscopic & Microscopic Characterization of Multi-layered Superconducting Thin Films S.M. Mukhopadhyay, S. Krishnaswami, S. Vemulakonda, Wright State University |
| 1:40pm | EM-TuA2 Characterization of Hydrogen Complex Formation in InP:Zn (100) M.D. Williams, S.A. Yasharahla, S.C. Williams, N. Jallow, Clark Atlanta University |
| 2:00pm | EM-TuA3 Invited Paper In situ Studies of Stacking Fault Formation in Silicon Carbide A. Galeckas, J. Linnros, Royal Institute of Technology, Sweden, P. Pirouz, Case Western Reserve University |
| 2:40pm | EM-TuA5 Spectroscopic Investigation of Epitaxial Dielectrics on SiC J. Choi, C.M. Tanner, R. Puthenkovilakam, J.P. Chang, University of California, Los Angeles |
| 3:00pm | EM-TuA6 Variation of WNx Gate Work Function after High Temperature Annealing P.-C. Jiang, J.S. Chen, National Cheng Kung University, Taiwan |
| 3:20pm | EM-TuA7 New Mechanisms for Controlling Transistor Junction Formation through Surface Chemistry E.G. Seebauer, K. Dev, C.T.Z. Kwok, R.D. Bratz, University of Illinois at Urbana-Champaign |
| 3:40pm | EM-TuA8 Annealing Effect on Dielectric Properties of Ti Doped K(Ta,Nb)O@sub 3@ Thin Film using PLD H.-J. Bae, J. Sigman, University of Florida, L.A. Boatner, Oak Ridge National Laboratory, D.P. Norton, University of Florida |