AVS 51st International Symposium
    Advanced Surface Engineering Tuesday Sessions
       Session SE-TuP

Paper SE-TuP6
Effect of Ion Irradiation during Deposition on the Structure of Alumina Thin Films Grown by Plasma Assisted Chemical Vapour Deposition

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: D. Kurapov, RWTH Aachen, Germany
Authors: D. Kurapov, RWTH Aachen, Germany
O. Kyrylov, RWTH Aachen, Germany
J.M. Schneider, RWTH Aachen, Germany
Correspondent: Click to Email
Alumina thin films deposited by plasma assisted vapour deposition were studied with respect to the structure and composition by X-ray diffraction and electron probe microanalysis, respectively. Alumina thin films were deposited on hot work tool steel AISI H11 at a growth temperature of 500 to 600 °C. The ion energy was affected by controlling the substrate power density from 2.7 to 6.6 W/cm@super 2@, which corresponds to the bias potential range from 720 to 905 V. Within the investigated process window the following characteristic phases could be identified : amourphous alumina, @gamma@-alumina, @alpha@-alumina as well as mixtures thereof. The alumina phase formation was found to be strongly influenced by deposition temperature and power density at the substrate. The influence of the power density is discussed with respect to the ion energy distribution, which is estimated based on the charge exchange model of Davis and Vanderslice.