AVS 51st International Symposium
    Semiconductors Monday Sessions
       Session SC+MI-MoM

Paper SC+MI-MoM10
Applications of a Dilute Magnetic Semiconductor Based on AlN

Monday, November 15, 2004, 11:20 am, Room 304B

Session: Dilute Magnetic and Ferromagnetic Semiconductors
Presenter: R.M. Frazier, University of Florida
Authors: R.M. Frazier, University of Florida
G.T. Thaler, University of Florida
J.Y. Leifer, University of Florida
C.R. Abernathy, University of Florida
S.J. Pearton, University of Florida
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With the increasing interest in spintronics, many attempts have been made at incorporating spin-based functionality into existing semiconductor technology. One approach, utilizing dilute magnetic semiconductors (DMS) formed via introduction of transition metal ions into III-Nitride hosts, would allow for integration of spin based phenomena into current wide bandgap technology. Further, the use of AlN broadens III-V DMS applications to tunneling devices and UV light emitters. The most evident application of ferromagnetic AlN is as a ferromagnetic tunnel barrier, similar to EuS, but unlike EuS should allow for operation at room temperature. Ion implantation has been shown to be an effective survey method for introduction of various transition metals into AlN. However, it is not a technique which will allow for the development of advanced spin based devices. Such devices will require epitaxial methods of the sort currently used for synthesis of III-Nitride optoelectronics. In this study, one such technique, Gas Source Molecular Beam Epitaxy (GSMBE) has been used to synthesize AlN films doped with Cr and Mn. In the Mn doped films, increasing the V/III ratio corresponded to an increased magnetic signal, indicating an increase in active Mn sites. In the case of both Mn and Cr doped AlN, the magnetic signal was found to depend on the flux of the dopant, and the optimal growth conditions were found. Growth of tunnel devices using AlTMN as a barrier will also be discussed. This work is supported by the Army Research Office under ARO-DAAD19-01-0-0701 and NSF under ECS-0224203.