AVS 51st International Symposium
    Semiconductors Thursday Sessions
       Session SC+EM-ThM

Invited Paper SC+EM-ThM7
Thin-Film Diamond Electronics: Progress and Expectations

Thursday, November 18, 2004, 10:20 am, Room 304B

Session: Wide Bandgap Semiconductors
Presenter: J.E. Gerbi, Argonne National Laboratory
Correspondent: Click to Email

Diamond has long been thought to have the potential to revolutionize electronics due to its exceptional single-crystal properties, including extremely high thermal conductivities and carrier mobilities. Unfortunately, major roadblocks exist for both the growth of affordable single-crystal diamond, and especially for the doping of such material. Non-single crystal diamond, while suffering the degradation of some important single crystal diamond properties, does nevertheless show promise as an extremely useful electronic material. A review of such materials will be given, with emphasis on how the structure of various types of polycrystalline diamond affects key electronic properties. The ability to dope polycrystalline diamond in non-traditional ways will be discussed, as will the integration of diamond thin films in a device environment. Finally, prototype room-temperature device fabrication and performance will be discussed. The emphasis will be made that the field of d iamond electronics continues to make significant progress, especially for niche applications such as MEMS and chemical sensors. This work was supported by the DOE-Office of Science-Materials Science under Contract No. W-31-109-ENG-38.