AVS 51st International Symposium
    Organic Films and Devices Tuesday Sessions
       Session OF-TuP

Paper OF-TuP7
Influences of Ion Irradiation for Depositing Aluminum Cathode in Organic Light-emitting Diodes

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: S.M. Jeong, Yonsei University, Korea
Authors: S.M. Jeong, Yonsei University, Korea
W.H. Koo, Yonsei University, Korea
S.H. Choi, Yonsei University, Korea
S.J. Jo, Yonsei University, Korea
H.K. Baik, Yonsei University, Korea
S.J. Lee, Kyungsung University, Korea
K.M. Song, Konkuk University, Korea
Correspondent: Click to Email
To demonstrate the effects of argon ion irradiation during cathode deposition, aluminum cathode prepared by ion beam assisted deposition process on spin-coated soluble phenyl-substituted poly-p-phenylene-vinylene (Ph-PPVs) thin films have been investigated and compared to those by thermal evaporation. Although energetic particles of Al assisted by Ar+ ion may damage the organic material, I-V-L characteristics are improved by applying thin Al buffer layer. It may be deduced from the smaller contact resistance between Al and Ph-PPV induced by large contact area, increase of density of state and lithium diffusion in ion beam assisted device. In addition, highly packed structure of Al cathode inhibits the permeation of H@sub 2@O and O@sub 2@ into Ph-PPV film through pinhole defects, and thus retards dark spot growth. In conclusion, the lifetime of organic light-emitting device (OLED) has been extended through ion beam assisted deposition process.