AVS 51st International Symposium
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP3
Visualization of Two-Dimensional Doping Profile in Si for the Fabrication of Resistive AFM Probe

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: H. Shin, Kookmin University, Korea
Authors: H. Shin, Kookmin University, Korea
B. Lee, Kookmin University, Korea
Correspondent: Click to Email
In recent, scanning resistive probe microscopy (SRPM)@footnote 1@, as a variant of SPM-based techniques, which has a semiconductor resistor at the apex of the tip and can observe surface charges directly, was newly proposed and demonstrated. Spatial resolution of SRPM is dependent upon the size of the prepared resistor at the apex. The size of the resistor can be determined by width of the SiO2 implant mask, where both sides of the mask were open and implanted with As+ ions, and the diffusion length of the ions underneath. Using Kelvin Force Microscopy (KFM), we investigated the area of the resistor or equivalently underneath of the mask and determined the diffusion length of implanted As+ ions. For the first time, the depletion regions in the graded junction between implanted n+ and p-type Si substrate were observed. Furthermore, we proposed the mechanism of the SRPM by the observation of the overlapping depletion regions in the narrow resistor, which results the lowering barrier height for charge carriers. @FootnoteText@ @footnote 1@ H. Park, J. Jung, D.-K. Min, S. Kim, S. Hong, and H. Shin, Scanning Resistive Probe Microscopy: Imaging Ferroelectric Domains, Appl. Phys. Lett., 84, 1734-1736 (2004).