AVS 51st International Symposium
    Nanometer-scale Science and Technology Friday Sessions
       Session NS-FrM

Paper NS-FrM3
Self-assembled Multilayers Creating Tailored Resists for Nanostructure Fabrication

Friday, November 19, 2004, 9:00 am, Room 213D

Session: Nanometer-scale Structures
Presenter: M.E. Anderson, The Pennsylvania State University
Authors: M.E. Anderson, The Pennsylvania State University
E.M. Carter, The Pennsylvania State University
A.R. Kurland, The Pennsylvania State University
C. Srinivasan, The Pennsylvania State University
M.W. Horn, The Pennsylvania State University
P.S. Weiss, The Pennsylvania State University
Correspondent: Click to Email
Designing and patterning complex hierarchical assemblies by exploiting methods of directed self-assembly in combination with a variety of lithographic techniques has been an active area of research for patterning in the sub-100 nm regime. We have used self-assembled multilayers to create molecular ruler resists to define nanostructures with precise spacing and edge resolution reaching the nanometer-scale.@footnote 1-3@ A molecular ruler resist of self-assembled multilayers, composed of alternating layers of @alpha@,@omega@-mercaptoalkanoic acids and coordinated metal ions, is selectively deposited on initial lithographically defined gold structures. This resist can be tuned based on the number of layers deposited to a desired thickness (routinely between 10-100 nm). Then, metal is deposited on the sample and the resist is removed, yielding spacings between metal structures dependent on the dimensions of the tailored resist. Work is underway to build molecular ruler resists independently either by capping selected regions of growth or by orthogonal growth of two different multilayer systems. A scheme in development is electroless metal deposition of the secondary metal, where the ruler resist both defines the structure spacing and inhibits deposition for selective metal placement. Molecular ruler resists can withstand the rigors of lithographic processing and are being developed to advance this method toward device fabrication. @FootnoteText@ @footnote 1@ A. Hatzor and P.S. Weiss, Science 291, 1019 (2001).@footnote 2@ M. E. Anderson et. al., Journal of Vacuum Science and Technology B 20, 2739 (2002).@footnote 3@ M. E. Anderson et. al., Journal of Vacuum Science and Technology B 21, 3116 (2003).