Giant magneto resistance (GMR) effect in nanoscale alternating magnetic/ non-magnetic metallic multilayers has evinced tremendous interest worldwide. Cu/Co Multilayers have been electrolytically deposited directly on to n-Si substrate from single bath, there by eliminating the need of a conducting seed layer. Magneto resistance is very sensitive to the growth conditions and can be destroyed by intermixing magnetic and non-magnetic interfaces and also by poor crystalline quality of the layers. Co and Cu are weakly miscible elements and for the reason they are most likely to yield chemically sharp interfaces. The observed MR value is »1%. Interface characteristics are analyzed using TEM, AFM and EPMA. Aim of the present work is to improve the magneto resistance value in these films by optimizing the deposition conditions and the layer thickness. The studies are going on to find out the effect of Cu layer thickness [by fixing Co layer to 2 nm thick] on MR and also to correlate the interface structure with giant magneto resistance.