AVS 51st International Symposium
    Magnetic Interfaces and Nanostructures Tuesday Sessions
       Session MI-TuM

Invited Paper MI-TuM1
Semiconductor Spintronics: From Basic Physics towards Spin Devices

Tuesday, November 16, 2004, 8:20 am, Room 304A

Session: Spintronics
Presenter: M. Oestreich, Universität Hannover, Germany
Authors: M. Oestreich, Universität Hannover, Germany
D. Hägele, Universität Hannover, Germany
J. Rudolph, Universität Hannover, Germany
S. Döhrmann, Universität Hannover, Germany
R. Winkler, Universität Hannover, Germany
H.M. Gibbs, University of Arizona
G. Khitrova, University of Arizona
D. Schuh, Technische Universität München, Germany
M. Bichler, Technische Universität München, Germany
W. Stolz, Universität Marburg, Germany
Correspondent: Click to Email
The electron spin in semiconductors has become a focus of intense research in the context of spintronic devices. A prime condition for the development of potential applications is the understanding of the spin decoherence, i.e. the loss of spin memory. In the first part of this talk we present the spin dynamics in (110) GaAs quantum wells at high temperatures and put forward a new spin dephasing mechanism that ultimately limits the high temperature spin dephasing times in GaAs quantum wells.@footnote 1@ In the second part of the talk we demonstrate the reduction of the threshold of semiconductor lasers by injection of spin polarized electrons, compare high and low temperature operation, and discuss problems and prospects of these spintronic devices.@footnote 2@. @FootnoteText@ @footnote 1@ S. Döhrmann et al., "Anomalous spin dephasing in (110) GaAs quantum wells: anisotropy and intersubband effects", cond-mat 0403052.@footnote 2@ J. Rudolph et al., "Laser threshold reduction in a spintronic device", Appl. Phys. Lett. 82, 4516 (2003).