AVS 51st International Symposium
    Magnetic Interfaces and Nanostructures Friday Sessions
       Session MI-FrM

Invited Paper MI-FrM1
Magnetic Tunnel Junctions for Magnetoresistive Random Access Memory

Friday, November 19, 2004, 8:20 am, Room 304A

Session: Advanced Magnetic Data Storage and Thin Film Processing
Presenter: J.M. Slaughter, Freescale Semiconductor
Authors: J.M. Slaughter, Freescale Semiconductor
J. Åkerman, Freescale Semiconductor
B. Butcher, Freescale Semiconductor
R.W. Dave, Freescale Semiconductor
M. DeHerrera, Freescale Semiconductor
M. Durlam, Freescale Semiconductor
B.N. Engel, Freescale Semiconductor
G. Grynkewich, Freescale Semiconductor
J. Janesky, Freescale Semiconductor
J. Martin, Freescale Semiconductor
S.V. Pietambaram, Freescale Semiconductor
N.D. Rizzo, Freescale Semiconductor
K. Smith, Freescale Semiconductor
J.J. Sun, Freescale Semiconductor
S. Tehrani, Freescale Semiconductor
Correspondent: Click to Email
Magnetoresistive random access memory (MRAM) employs a magnetoresistive device integrated with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is non-volatile, has unlimited read and write endurance, and has demonstrated high-speed read and write operations. Fundamentals of MRAM based on Magnetic Tunnel Junction (MTJ) devices, and recent technology developments in the areas of magnetic materials and magnetic device design is reviewed. The properties of our unique toggle-switching MRAM bit, as well as specific magnetic and electrical properties required for that bit will is discussed and compared to the conventional switching approach. The new bit cell uses a balanced synthetic-antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. The use of this bit cell in a 4Mb MRAM circuit also is described.