AVS 50th International Symposium
    Thin Films Thursday Sessions

Session TF-ThA
In-Situ / Ex-Situ & Real-Time Monitoring

Thursday, November 6, 2003, 2:00 pm, Room 329
Moderator: R.A. Lukaszew, University of Toledo


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm TF-ThA1
Thin-film Cavity Ringdown Spectroscopy (tf-CRDS) for Ultra-sensitive and Direct Detection of Defect-related Absorptions in a-Si:H Thin Films
I.M.P. Aarts, B. Hoex, A.H.M. Smets, R. Engeln, Eindhoven University of Technology, The Netherlands, M. Nesládek, Limburgs Universitair Centrum, Belgium, W.M.M. Kessels, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands
2:20pm TF-ThA2
Quasi-Real Time in-situ FT-IR Spectroscopy of Doped and Undoped SiO@sub 2@ Deposition from TEOS / Ozone Chemistry
J.E. Crowell, L.D. Flores, University of California, San Diego
2:40pm TF-ThA3
Numerical Analysis of the Three-phase Problem in Optical Diagnostics
K.F. Flock, D.E. Aspnes, North Carolina State University
3:00pm TF-ThA4 Invited Paper
Mapping Epitaxial Interfaces with Ultrabright X-rays
R. Clarke, University of Michigan, Ann Arbor
3:40pm TF-ThA6
Real Time X-ray Monitoring of Ta Film Thickness, Phase, and Texture Evolution during Sputter Deposition
D. Windover, Rensselaer Polytechnic Institute, S.L. Lee, ARDEC, Benet Laboratories, T.-M. Lu, Rensselaer Polytechnic Institute
4:00pm TF-ThA7 Invited Paper
Epitaxial Growth of Nanostructured Metal/Metal Oxide Thin Films by Ultrahigh Vacuum In-situ TEM
M. Yeadon, IMRE, Singapore, J. Yu, National University of Singapore, W. Tian, H.P. Sun, X.Q. Pan, University of Michigan, C.B. Boothroyd, IMRE, Singapore, R.A. Lukaszew, University of Toledo, R. Clarke, University of Michigan, Ann Arbor
4:40pm TF-ThA9
Growth of Epitaxial Two-dimensional Layers of Indium on Si(100) by Femtosecond Pulsed Laser Deposition
M.A. Hafez, M.S. Hegazy, H.E. Elsayed-Ali, Old Dominion University
5:00pm TF-ThA10
Real-time Observation of Initial Stages of Copper Film Growth on Silicon Oxide using Reflection High-energy Electron Diffraction
J.T. Drotar, Rensselaer Polytechnic Institute