| AVS 50th International Symposium | |
| Thin Films | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:40am | TF-MoM2 Invited Paper Advancements in ALD Chemistry M. Ritala, University of Helsinki, Finland |
| 9:20am | TF-MoM4 Incorporation and Control of Silica in Hafnium Silicates using Atomic Layer Deposition Techniques M.N. Rocklein, F.H. Fabreguette, S.M. George, University of Colorado |
| 9:40am | TF-MoM5 In-situ Infrared Analysis of Atomic Layer Deposition Half-Reactions: Hafnium Diethyl- Amide Adsorption and Dissociation on SiO@sub2@ and HfO@sub2@ M.J. Kelly, T.D. Abatemarco, G.N. Parsons, North Carolina State University |
| 10:00am | TF-MoM6 Characteristics of Hafnium Aluminate Films for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method J. Lee, J. Koo, Hanyang University, Korea, Y. Kim, Pusan National University, Korea, H. Jeon, Hanyang University, Korea |
| 10:20am | TF-MoM7 Invited Paper Atomic Layer Deposition of Transition Metal Films R.G. Gordon, Harvard University |
| 11:00am | TF-MoM9 Demonstration of AlN ALD Using Hydrazine as the Nitrogen Precursor F.H. Fabreguette, University of Colorado, T.E. Seidel, Genus, Inc., S.M. George, University of Colorado |
| 11:20am | TF-MoM10 Low Temperature Deposition of SiN using Sequential Exposures of Si@sub 2@Cl@sub 6@ and NH@sub 3@ J.Y. Ahn, J.G. Kim, J.W. Lim, H.S. Kim, U. Chung, J.T. Moon, Samsung Electronics, Korea |
| 11:40am | TF-MoM11 Atomic Layer Deposition on Fine Particles J.D. Ferguson, A.W. Weimer, S.M. George, University of Colorado |