| AVS 50th International Symposium | |
| Semiconductors | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SC-TuA1 Complex Formation between Magnesocene (MgCp@sub 2@) and NH@sub 3@: Origin of the "Memory Effect" G.T. Wang, J.R. Creighton, Sandia National Laboratories |
| 2:20pm | SC-TuA2 Real-time Optical Monitoring of Gas Phase Kinetics in InN Vapor Phase Epitaxy at Elevated Pressures N. Dietz, V. Woods, Georgia State University |
| 2:40pm | SC-TuA3 Invited Paper Chemical Complexities of AlGaInN MOCVD J.R. Creighton, G.T. Wang, M.E. Coltrin, W.G. Breiland, Sandia National Laboratories |
| 3:20pm | SC-TuA5 Ab initio Prediction of the Gas-Phase Precursors for AlN Sublimation Growth@footnote 1@ Y. Li, D.W. Brenner, North Carolina State University |
| 3:40pm | SC-TuA6 Reflectance Interferometry During III-V Nitride Growth, Much More than a Growth Rate Monitor C.R. Eddy, Jr., R.T. Holm, R.L. Henry, J.C. Culbertson, Naval Research Laboratory |
| 4:00pm | SC-TuA7 Real-time Diagnostics of OMCVD Epitaxy with an Integrated Rotating-compensator/Rotating-sample Polarimeter K.F. Flock, S.J. Kim, M. Asar, D.E. Aspnes, North Carolina State University |
| 4:20pm | SC-TuA8 GaN Nucleation Layer Evolution on Sapphire D.D. Koleske, J.J. Figiel, M.E. Coltrin, A.A. Allerman, K.C. Cross, C.C. Mitchell, M.J. Russell, Sandia National Laboratories |
| 4:40pm | SC-TuA9 Investigations of Plasma Etching and Contact Processing on AlGaN Alloys Containing 0 to 50% Al K.H.A. Bogart, A.J. Fischer, M.H. Crawford, D.D. Koleske, A.A. Allerman, R.J. Shul, D.E. Peebles, Sandia National Laboratories, I. Adesida, University of Illinois at Urbana Champaign, S. Jones, Sandia National Laboratories, D. Selvanathan, University of Illinois at Urbana Champaign, K.W. Fullmer, F. Jalali, Sandia National Laboratories |
| 5:00pm | SC-TuA10 Morphological Evolution of GaAs Surface during Damage-free Etching S.H. Lee, H.P. Gillis, UCLA |