| AVS 50th International Symposium | |
| Semiconductors | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:40am | SC-ThM2 Invited Paper Strain Engineering of SiGe/Si Structures P.M. Mooney, IBM T.J. Watson Research Center |
| 9:20am | SC-ThM4 Strain Relaxation of Step-graded InAsP Buffers on InP Grown by Molecular Beam Epitaxy M.K. Hudait, Y. Lin, S.A. Ringel, The Ohio State University |
| 9:40am | SC-ThM5 Effects of InAlSb Buffer Layers on the Structural and Electronic Properties of InSb Films X. Weng, N.G. Rudawski, R.S. Goldman, University of Michigan, D.L. Partin, J. Heremans, Delphi Research and Development Center |
| 10:00am | SC-ThM6 Heteroepitaxy of III-Se Materials: Compatibility to Si and Their Growth Studied by In-situ Scanning Probe Microscopy T. Ohta, A. Klust, J.A. Adams, Q. Yu, M.A. Olmstead, F.S. Ohuchi, University of Washington |
| 10:20am | SC-ThM7 Characterization of High Quality GaAs(100) Films Grown on Ge(100) Substrates A. Wan, V.M. Menon, D. Wasserman, A. Kahn, S.R. Forrest, S.A. Lyon, Princeton University |
| 10:40am | SC-ThM8 Invited Paper In Situ Monitoring of Stress Relaxation in Semiconductors E. Chason, Brown University |
| 11:20am | SC-ThM10 Strain Effects in Si-Ge Growth on Vicinal Si Surfaces Prepared by Laser Texturing F. Watanabe, D.G. Cahill, J.R. Serrano, S. Hong, T. Spila, J.E. Greene, University of Illinois at Urbana-Champaign |