AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF1-WeA

Paper TF1-WeA10
Gadolinium-doped Yttrium Aluminum Garnet Ultraviolet Emitting Materials Deposited by rf Reactive Magnetron Sputtering

Wednesday, November 5, 2003, 5:00 pm, Room 329-

Session: Thin Film - Based Combinatorial Methods
Presenter: Y. Deng, University of Tennessee
Authors: Y. Deng, University of Tennessee
J.D. Fowlkes, University of Tennessee
J.M. Fitz-Gerald, The University of Virginia
P.D. Rack, University of Tennessee
Correspondent: Click to Email
Gadolinium is known to radiate in the ultra-violet region at ~ 312nm and 275nm due to intra-band 4f transitions when suitably doped in oxide host materials. To investigate the ultraviolet Gd emission, thin films of gadolinium-doped with yttrium aluminum garnet (YAG:Gd) have been deposited by rf reactive magnetron sputtering. The parameters in this work include RF power, substrate temperature, O2 partial pressure ratio and annealing temperature. An optimized combinatorial process has been obtained by statistical analysis on a factorial design of experiment. The structure and composition of the films have been characterized by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The crystallinity of the films has been investigated by X-ray diffraction (XRD). The effect of Gd doping level on the cathodoluminescent (CL) properties of the films has also been studied and has been correlated to the chemical and microstructural properties of the films.