AVS 50th International Symposium
    Surface Science Tuesday Sessions
       Session SS3-TuA

Invited Paper SS3-TuA5
Modification of Silicon Surfaces: Toward Functional Organic and Bioorganic Interfaces

Tuesday, November 4, 2003, 3:20 pm, Room 328

Session: Organic Functionalization of Semiconductor Surfaces
Presenter: G.P. Lopinski, National Research Council of Canada
Authors: B. Fabre, National Research Council of Canada
G.P. Lopinski, National Research Council of Canada
D.D.M. Wayner, National Research Council of Canada
Correspondent: Click to Email
Over the last decade there has been increasing awareness of the opportunities presented by the convergence of surface science and organic chemistry. This work is underpinning the development of revolutionary concepts for the design of molecular scale devices and for the integration of solid state, inorganic structures with biologically active interfaces. Although the reactions of organic molecules with silicon surfaces are not new, this area which traditionally has been dominated by physical scientists has increasingly been influenced by organic and bioorganic chemists. This organic perspective has brought new levels of complexity of structure and function and greater understanding of the molecular basis of reactivity. Much of the work so far has focused on exploring the scope of the chemistry and on understanding the structure and quality of the organic-silicon interfaces. An example is the reaction of hydrogen-terminated silicon with styrene that proceeds as a chain reaction on the silicon surface. We have developed simple chemical approaches to introduce essentially any chemical function at the ends of Si-alkyl monolayers. Most recently, we are developing strategies to pattern silicon surfaces with biologically active molecules such as proteins and DNA as well as with conducting polymers (polythiophene). A few simple devices have been prepared using electrochemically grafted polythiophene as a top contact. I will describe the preparation as well as the electrochemical and electrical characterization of these simple metal-insulator-semiconductor structures