AVS 50th International Symposium
    Surface Science Tuesday Sessions
       Session SS3-TuA

Paper SS3-TuA10
Vapor-phase Adsorption Kinetics of 1-Decene on H-terminated Si(100)

Tuesday, November 4, 2003, 5:00 pm, Room 328

Session: Organic Functionalization of Semiconductor Surfaces
Presenter: S.M. Han, University of New Mexico
Authors: M.R. Kosuri, University of New Mexico
H. Gerung, University of New Mexico
Q. Li, University of New Mexico
S.M. Han, University of New Mexico
B.C. Bunker, Sandia National Laboratories
T.M. Mayer, Sandia National Laboratories
Correspondent: Click to Email
We have investigated in situ and in real time the vapor-phase self-assembly of 1-decene on Si, using attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIRS). The adsorption of 1-decene on hydrogenated Si(100) results in an alkane terminated hydrophobic surface. The sessile drop water contact angle after the self-assembly of 1-decene is 107 ± 2°. The absolute saturation coverage of decane is approximately 3.2x10@super 14@ cm@super -2@ based on the IR absorbance of C-H stretching vibrational modes near 2900 cm@super -1@. We also report the adsorption rate constant of 1-decene on hydrogenated Si(100) at 160 °C under 30 mTorr of vapor-phase 1-decene. The adsorption rate constant based on a Langmuir isotherm is 1 ± 0.1 Torr@super -1@min@super -1@. The estimated thickness of the decane monolayer, determined by X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry, is approximately 16 Å. Monitoring the decane monolayer over a period of 2 months using XPS has shown that the silicon surface underneath the decane monolayer gets oxidized with time, leading to the degradation of the decane layer.