AVS 50th International Symposium
    Surface Science Tuesday Sessions
       Session SS2-TuM

Paper SS2-TuM11
Conversion from Nanowire to Epilayer: Epitaxial Growth of Bi on Si(114)-2x1

Tuesday, November 4, 2003, 11:40 am, Room 328

Session: Nucleation and Growth
Presenter: J.M. Seo, Chonbuk National University, Korea
Authors: S. Cho, Chonbuk National University, Korea
J.M. Seo, Chonbuk National University, Korea
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The Bismuth (Bi) adsorption on the reconstructed Si(114)-2x1 has been studied using STM under UHV. Among 1-D features of Si(114)-2x1, such as Tetramer, Dimer and Restatom rows parallel to [-110] direction, Bi atoms preferentially adsorbed on the Tetramer rows and formed 1-D wires whose separation is 1.6 nm. The periodic structure in the Bi wire along [-110] has been converted to 3a (a=0.38 nm) from 2a of clean Si(114). The Bi wire of the second layer adsorbs between the Bi wires of the first layer, and shifts by 1.5a along the row. The Bi wires of subsequent layers also adsorb between the previously formed Bi wires in the same fashion. Such epitaxial growth continues unless the defects like substrate vacancies interfere. The packing unit is a Bi-dimer and the hexagonal packing has been confirmed by the hexagonal pattern of the facet near the ledge. It has been concluded that the reasons for 2-D epitaxial growth of Bi on Si(114) are the followings; the first, the existence of preferential adsorption site on Si(114), and the second, the adjustable lattice-matching between the Bi-dimer row and the substrate along as well as perpendicular to the wire.