AVS 50th International Symposium
    Surface Science Thursday Sessions
       Session SS1-ThM

Paper SS1-ThM7
Adsorbate Interactions and Roughening of Sub-monolayer Halogenated Si(100) Surfaces

Thursday, November 6, 2003, 10:20 am, Room 310

Session: Patterned Growth and Etching of Semiconductors
Presenter: D. Chen, University of North Carolina at Chapel Hill
Authors: D. Chen, University of North Carolina at Chapel Hill
J.J. Boland, Trinity College Dublin, Ireland
Correspondent: Click to Email
Spontaneous roughening of halogen terminated Si(100) surfaces was previously shown to arise from steric repulsions between adsorbates.@footnote 1@ However, more recent studies have shown that significant roughening occurs even for coverages that are substantially below a monolayer and calls into question the role of steric repulsions. Here, we present a comprehensive study of the roughening process on a sub-monolayer chlorinated Si(100) surface, and in particular its correlation with both the surface coverage and spatial distribution of adsorbates. We find the roughening is due to steric repulsions and this interpretation is supported by DFT calculations. A new model is developed to describe the dependence of roughening on halogen coverage. @FootnoteText@ @footnote 1@C.F.Herrmann, D.Chen, J.J.Boland, Phys. Rev. Lett. 89, 096102 (2002)