AVS 50th International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP29
Semiconductor Surface Reconstructions of the Si(100) Surface at 5K

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: M. Dubois, IEMN-CNRS, France
Authors: B. Grandidier, IEMN-CNRS, France
L. Perdigao, IEMN-CNRS, France
D. Deresmes, IEMN-CNRS, France
M. Dubois, IEMN-CNRS, France
C. Delerue, IEMN-CNRS, France
G. Allan, IEMN-CNRS, France
D. Stievenard, IEMN-CNRS, France
Correspondent: Click to Email
The reconstruction of the Si(100) is related to the formation of dimers to lower the surface energy. Their bonding consists of a weak double bond so that the symmetric configuration is not held and give rise to buckled dimers. As several types of reconstructions have been predicted, with well defined electronic properties, we have studied the reconstructions of the Si(100) surface by scanning tunneling microscopy (STM) and spectroscopy at 5K. At low positive sample voltages, when well-ordered surfaces are prepared, two phases, the c(2x4) and the p(2x2) reconstructions, are visible. By increasing the number of surface defects, a third arrangement, the p(2x1) asymmetric reconstruction, appears. Scanning tunneling spectroscopic measurements indicate that all the surfaces are semiconductor. However at higher positive voltages or at negative voltages, the appearance of the dimers change into a symmetric features. While spectroscopic data show that the tip does not induce a modification of the surface reconstruction whatever the sample voltage and the reconstruction types of the surface, the voltage-dependent STM images are investigated by theoretical calculations for the p2x2 arrangement.