AVS 50th International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP27
Adsorption and Thermal Decomposition Reaction of Vinylacetic Acid on Si(100)2x1 Surface

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: K.-S. An, Korea Research Institute of Chemical Technology
Authors: K.-S. An, Korea Research Institute of Chemical Technology
J.Y. Baik, Korea Research Institute of Chemical Technology
H.-N. Hwang, Korea Research Institute of Chemical Technology
Y. Kim, Korea Research Institute of Chemical Technology
C.-Y. Park, SungKyunKwan University, Korea
C.C. Hwang, POSTECH, Korea
B. Kim, POSTECH, Korea
Correspondent: Click to Email

Covalent attachment chemistry of organic molecules on silicon surfaces has been of recent interest in surface science. Several molecule attachment chemistry on the Si(001)2x1 surface has been reported for organic molecules including various single and multi-functional groups such as alkene, hydroxyl, thiol, amine, and carboxyl groups, etc, which can be applied important building blocks for organic molecule/Si surface. In this study, the adsorption and thermal decomposition of vinylacetic acid (VAA) on the Si(001)2x1 surface is investigated using photoelectron spectroscopy and thermal desorption specroscopy. Vinylacetic acid is a typical monomer having both vinyl (C=C) and carboxyl groups (COOH) with alkyl chain, which can well adsorb on the Si dimer as the [2+2] cycloadditional and dissociative reaction, respectively. Curve fitting of the Si 2p core level spectra taken after VAA exposures shows the development of two new surface components, S@sub O@ and S@sub H@, shifted by +0.93 and +0.40 eV, respectively, with respect to the bulk component. From the result, it is found that VAA adsorbs on the Si(001)2x1 surface, not through the cycloaddition reaction with vinyl group (C=C) but through the dissociative adsorption of RCOOH (R = CH@sub 2@CHCH@sub 2@) into RCOO(ad) and H(ad) without breaking the Si dimer. The dissociative adsorption is confirmed by the analysis of the C 1s and O 1s core level spectra. Based on the line-shape changes of the Si 2p, C 1s, O1s core level spectra and TDS measurement with increasing the substrate temperature after the VAA saturation, the thermal decomposition and desorption behaviors of the VAA molecules are also investigated.