AVS 50th International Symposium
    Surface Science Wednesday Sessions
       Session SS+OF-WeA

Paper SS+OF-WeA7
Surface Polymerization by Ion Assisted Deposition for Polythiophene Film Growth

Wednesday, November 5, 2003, 4:00 pm, Room 327

Session: Growth and Characterization of Organic Films
Presenter: S. Tepavcevic, University of Illinois at Chicago
Authors: S. Tepavcevic, University of Illinois at Chicago
Y. Choi, University of Illinois at Chicago
L. Hanley, University of Illinois at Chicago
Correspondent: Click to Email

Cationic polymerization is induced at the gas-solid interface by hyperthermal organic cations coincident on a surface with a thermal beam of organic monomers.@footnote 1@ This process, termed surface polymerization by ion assisted deposition (SPIAD), produces films that maintain the chemical structure of the monomer.@footnote 2@ A polythiophene film is produced here by SPIAD with 100 eV thiophene ions and terthiophene monomers coincident on Si and indium tin oxide (ITO) substrates held under vacuum. X-ray photoelectron spectroscopy observes enhancement in film growth for SPIAD compared with either thiophene ion or terthiophene exposure alone. Polythiophene films grown by both mass-selected@footnote 1@ and non-mass-selected ions@footnote 3@ with coincident terthiophene dosing both display similar fluorescence intensity at two wavelengths characteristic of emission from films of the terthiophene monomer. Raman spectra of films from non-mass-selected ions display several vibrations also observed in terthiophene films. Ions therefore play a critical role in film growth from non-mass-selected ions, in addition to any radical or photochemically driven processes that may also occur. @FootnoteText@ @footnote 1@L. Hanley and S.B. Sinnott, Surf. Sci. 500 (2002) 500. @footnote 2@S. Tepavcevic, Y. Choi, and L. Hanley, J. Amer. Chem. Soc. 125 (2003) 2396.@footnote 3@L. Hanley, Y. Choi, E.R. Fuoco, F.A. Akin, M.B.J. Wijesundara, M. Li, A. Tikhonov, and M. Schlossman, Nucl. Instr. Meth. Phys. Res. B 203C (2003) 116.