AVS 50th International Symposium
    Surface Science Wednesday Sessions
       Session SS+OF-WeA

Invited Paper SS+OF-WeA3
Spectroscopic Measurements on Ultra Thin Highly Ordered Films of Organic Semiconductors

Wednesday, November 5, 2003, 2:40 pm, Room 327

Session: Growth and Characterization of Organic Films
Presenter: T. Fritz, TU Dresden, Germany
Correspondent: Click to Email

Research activity on molecular solids has gathered pace in recent years as these materials have a wide range of interesting properties, emerging industrial interest with real applications at the horizon, and possible future applications that will enable electronics to move into the nanoscale. High quality samples, precise structural data, and a detailed understanding of the physical properties are essential, with special emphasis on thin films and interfaces. In this respect, the use of highly controlled growth techniques like Organic Molecular Beam Epitaxy (OMBE) is becoming more and more important, aiming at high quality thin films with controlled crystal structure and morphology, and therefore displaying well defined physical properties. In order to investigate those physical properties deeply, spectroscopy methods are required which allow to characterize films with film thicknesses down to even submonolayers. In our contribution two different spectroscopy methods will be discussed in detail. By the first one, called Scanning Tunneling Spectroscopy (STS), one can determine the energetic positions of both filled and empty states of a molecular layer on an inorganic substrate in a single measurement. Due to the high special resolution small domains with different ordering can be electronically distinguished. Despite electron spectroscopies, optical spectroscopy on organic materials is a very powerful tool and can even provide structural information. Given the fact that exciton confinement effects in quasi-one-dimensional organic crystals will become apparent only if the layer is sufficiently thin (usually less than 4 monolayers), a method is required which will allow to measure the optical absorption down to submonolayers coverage with a sufficient signal-to-noise ratio. The method of choice is the Differential Reflection Spectroscopy (DRS, a variant of reflection absorption spectroscopy), carried out in situ, i.e., during the actual film growth.