AVS 50th International Symposium
    Advanced Surface Engineering Tuesday Sessions
       Session SE-TuP

Paper SE-TuP2
Growth of PACVD c-BN Films and c-BN/Diamond Bilayers

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: T.S. Yang, National Dong Hwa University, Taiwan, ROC
Authors: M.S. Wong, National Dong Hwa University, Taiwan, ROC
J.B. Cheng, National Dong Hwa University, Taiwan, ROC
T.S. Yang, National Dong Hwa University, Taiwan, ROC
S.S. Chu, National Dong Hwa University, Taiwan, ROC
Correspondent: Click to Email
The synthesis of c-BN films was carried out by the reaction of BF3 and N2 in the hydrogen and argon mixture using microwave plasma-assisted chemical vapor deposition (PACVD). The effects of N2/BF3 ratios, hydrogen addition, DC substrate-bias voltage and diamond as bufferlayer on the formation of c-BN were investigated. As-grown films are characterized by FTIR, grazing-incidence XRD, and SEM. The composition of gas mixture and energy of ion bombardment are critical to the formation of c-BN phase in the BN films. Under optimal growth conditions and using nanocrystalline diamond film as bufferlayer, the growth of high c-BN content up to ~85 % c-BN was achieved.