AVS 50th International Symposium
    Semiconductors Friday Sessions
       Session SC+NS-FrM

Paper SC+NS-FrM7
Bond-Centered Hydrogen in Amorphous Silicon: New Infrared Studies

Friday, November 7, 2003, 10:20 am, Room 321/322

Session: Low Dimensional Structures and Amorphous Silicon
Presenter: J.-F.T. Wang, Vanderbilt University
Authors: J.-F.T. Wang, Vanderbilt University
G. Lüpke, The College of William and Mary
L.C. Feldman, Vanderbilt University
N.H. Tolk, Vanderbilt University
Correspondent: Click to Email
Recent infrared absorption spectroscopy measurements taken at 77 K on initially hydrogen free amorphous silicon following hydrogen implantation at low temperature, exhibit an absorption line associated with the bond-centered (BC) hydrogen local vibration stretching mode at 1993 cm-1. This line, newly observed in amorphous silicon, appears at the same wavelength seen in crystal silicon following hydrogen implantation at LN temperatures.@footnote 1,2@ These results indicate that the bond-center (BC) hydrogen defect structure can form in amorphous silicon as well. The experimental data give insight into recent molecular dynamic simulations involving hydrogen's role in the amorphous-to-nanocrystalline phase transition in amorphous silicon.@footnote 3@ In both the crystalline and amorphous case, the 1993 cm-1 line disappears when the samples are annealed to room temperature. However only in the crystalline silicon case does the migrating hydrogen reappear in other IR-active defect sites.@footnote 1,2@ @FootnoteText@ @footnote 1@M. Budde, G. Lüpke, C. Parks Cheney, N. H. Tolk, and L. C. Feldman, Phys. Rev. Lett. 85, 1452 (2000). @footnote 2@B. Holm, K. Bone Nielsen, and B. Bech Nielsen, Phys. Rev. Lett. 66, 2360 (1991). @footnote 3@Saravanapriyan Sriraman, Sumit Agarwal, Eray S. Aydil & Dimitrios Maroudas, Nature (London) 418, 62 (2002).