The realization of semiconductor quantum dot arrays and networks in well-defined lateral arrangements is essential for the development of future quantum functional devices. We have successfully created these kinds of networks by self-organized anisotropic strain engineering of (In,Ga)As/GaAs templates for the ordering of InAs quantum dots by local strain recognition: On GaAs (100) substrates, during molecular beam epitaxy of a strained (In,Ga)As/GaAs superlattice, elongated (In,Ga)As quantum dots develop into very uniform and long quantum wire arrays with a well-defined lateral periodicity. Quantum wire formation relies on the anisotropic adatom surface migration and In desorption during annealing of the layers of elongated quantum dots after capping with a thin GaAs layer. The accumulation and improvement of the uniformity of the generated anisotropic strain field in superlattice growth provides a well-defined template for the ordering of InAs quantum dots grown on top in one-dimensional arrays. On high-index GaAs (311)B substrates, strain induced growth instability of (In,Ga)As layers occurs to from a matrix of closely packed cells. The related strain distribution constitutes a uniform template for the full control of InAs quantum dot nucleation in a two-dimensionally connected network. Excellent structural perfection and optical properties are established for these ordered InAs quantum dot arrays by atomic force microscopy, high-resolution X-ray diffraction, and photoluminescence spectroscopy. Temperature dependent photoluminescence measurements reveal efficient carrier transfer from the templates, which themselves are distinct one- and zero-dimensional quantum nanostructure arrays, to the quantum dots and within the quantum dot arrays. Hence, self-organized anisotropic strain engineering provides a unique route for the realization of well-defined and functional quantum dot arrays and networks of high quality.