AVS 50th International Symposium
    Organic Films and Devices Tuesday Sessions
       Session OF-TuP

Paper OF-TuP8
Electrical and Optical Characteristics of Indium Tin Oxide Thin Films Deposited by an Oxygen Beam Assisted Deposition Technique on Organic Electroluminescent Device (OLED)

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: N.G. Cho, Sungkyunkwan University, South Korea
Authors: N.G. Cho, Sungkyunkwan University, South Korea
Y.H. Lee, Sungkyunkwan University, South Korea
J.H. Lee, Sungkyunkwan University, South Korea
Y.W. Ko, Electronics and Telecommunications Research Institute (ETRI), Korea
J.H. Lee, Electronics and Telecommunications Research Institute (ETRI), Korea
G.Y. Yeom, Sungkyunkwan University, South Korea
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To fabricate active matrix organic electroluminescent devices (OLED), a transparent conducting material such as indium tin oxide(ITO) has to be deposited on the organic material of the devices and the organic materials are easily damaged by the oxygen atom, ion bombardment, heating, etc. during the deposition processing of ITO. Therefore, it is very difficult to deposit ITO on the OLED to form a transparent electrode. Also, it is difficult to maintain both electrical conductivity and transparency of ITO without generating damages to OLED when a conventional ITO deposition technique such as sputter deposition is used. Therefore, in this study, a dual oxygen ion, neutral beam assisted evaporator system has been used to deposit ITO films on the OLED to investigate as a possible transparent and conductive ITO deposition technique without generating damage to OLED. The characteristics of the deposited ITO on OLED was investigated using a four-point probe and a UV-spectrometer to measure the resistivity and transmittance of ITO films, respectively. The change of surface roughness after ITO deposition was investigated using an atomic force microscopy. Also, current-voltage(I-V) characteristics of the fabricated OLED with the ITO electrode were measured by HP-4145A semiconductor parameter analyzer.