AVS 50th International Symposium
    Organic Films and Devices Tuesday Sessions
       Session OF+EM-TuM

Paper OF+EM-TuM6
An Optical and Electronic Properties Study of a Stable n-Type Organic Semiconductor: N,N'-bis(3-phenoxy-3-phenoxy-phenoxy)-1,4,5,8-naphthalenetetracarboxydiimide

Tuesday, November 4, 2003, 10:00 am, Room 318/319

Session: Molecular and Organic Films and Devices-Electronics
Presenter: D.X. Yang, University of North Carolina at Chapel Hill
Authors: D.X. Yang, University of North Carolina at Chapel Hill
R.P. Shrestha, University of North Carolina at Chapel Hill
T.J. Dingemans, Delft University of Technology, The Netherlands
E.T. Samulski, University of North Carolina at Chapel Hill
E.A. Irene, University of North Carolina at Chapel Hill
Correspondent: Click to Email
The use of organic semiconductors in the electronic devices typically requires stable and reliable n and p-type semiconductors. Stable p-type organic semiconductors are well known, but useful n-type organic semiconductors are rare mainly due to their relative reactivity. In this study, a novel n-type organic semiconductor: N,N'-bis(3-phenoxy-3-phenoxy-phenoxy)-1,4,5,8-naphthalenetetracarboxydiimide (NDA-n2) is investigated. NDA-n2 is stable up to 200 °C in air and shows excellent solubility in THF and CH@sub 2@Cl@sub 2@. Also, its co-planar packing structure could yield high electronic mobility. NDA-n2 film was spin-cast onto SiO@sub 2@ coated Si wafer substrate. The optical properties were determined using spectroscopic ellipsometry (SE) and optical absorption spectroscopy in the visible near UV optical range. The optical properties were obtained from the experimental data using a Gaussian oscillator model and regression analyses. The results show four absorption peaks around 4.60 eV, 3.87 eV, 3.68 eV and 3.48 eV. Atomic force microscopy (AFM) was used to obtain surface roughness which was included in the optical model using the Bruggeman effective medium approximation. Electrical properties were determined from simple structures and correlated with film deposition parameters. PN junctions were formed and evaluated.