AVS 50th International Symposium
    Organic Films and Devices Tuesday Sessions
       Session OF+EM-TuM

Paper OF+EM-TuM5
Optical and Electronics Properties of Poly(o-Methoxyaniline) (POMA) for Organic FET Applications

Tuesday, November 4, 2003, 9:40 am, Room 318/319

Session: Molecular and Organic Films and Devices-Electronics
Presenter: R.P. Shrestha, University of North Carolina at Chapel Hill
Authors: R.P. Shrestha, University of North Carolina at Chapel Hill
D.X. Yang, University of North Carolina at Chapel Hill
E.A. Irene, University of North Carolina at Chapel Hill
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The optical properties of spin coated thin films of poly(o-methoxyaniline) (POMA) was investigated using spectroscopic ellipsometry (SE) and optical absorption spectroscopy in the visible–near UV optical range. A Gaussian oscillator optical model was used to fit the data obtained from SE. Atomic force microscopy (AFM) was used to characterize film roughness and these results were also evaluated in the optical model. We have investigated the effect of different spin deposit conditions including spin rate, and concentration of solution and deposition ambient on the POMA film thickness, surface roughness, optical and electronic properties. Organic thin film field effect transistor fabrication was carried out using POMA on a gold line structure that formed the source and drain contacts and with SiO2 covered Si wafer as the gate dielectric and substrate, respectively. Device characteristics are presented.