AVS 50th International Symposium
    Nanotubes Wednesday Sessions
       Session NT-WeP

Paper NT-WeP5
Preparation of Self-Assembled Carbon Nano-Ropes and Carbon Nanotubes Using Microwave Plasma-Enhanced Chemical Vapor Deposition@footnote 1@

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: M. Taniguchi, Meijo University, Japan
Authors: M. Taniguchi, Meijo University, Japan
M. Hiramatsu, Meijo University, Japan
Y. Ando, Meijo University, Japan
M. Hori, Nagoya University, Japan
Correspondent: Click to Email
Carbon nano-structures such as carbon nanotubes, nanofibers and nanocrystalline diamond films are of tremendous interest from both a fundamental and an applied prospective. From the point of view of their wide applications, it is desirable to control properties such as the size, shape, and growth direction of surface structures during the growth. Carbon nano-structures with different structure and morphology can now be fabricated using several techniques. Among various techniques used for the growth of carbon nano-structures, plasma-enhanced chemical vapor deposition (PCVD) has gained considerable importance for the industrial application due to its feasibility and potentiality for large-area production with reasonable growth rates. In this work, aligned carbon nano-structures were grown using a conventional microwave plasma-enhanced chemical vapor deposition (MWPCVD) with a 1.5-kW microwave generator. A mixture of acetylene and hydrogen was used as a carbon source gas. The applied microwave power and the pressure during the growth were 400-1200 W and 25-80 Torr, respectively. The growth experiments were carried out for 1-15 min at substrate temperatures ranging from 500 to 800 °C. The morphologies of the grown carbon nano-structures depended strongly on the growth temperature. Vertically aligned, self-assembled, stranded carbon nano-fibers (carbon nano-ropes) were grown at relatively low temperature of about 500 °C. On the other hand, carbon nanotubes were grown on the catalyzed Si substrate at the temperature of about 800 °C. The field emission characteristics for the aligned carbon nano-structures were investigated. @FootnoteText@ @footnote 1@This work was supported by 21st century COE program, Nano Factory.