AVS 50th International Symposium
    Nanotubes Wednesday Sessions
       Session NT-WeP

Paper NT-WeP3
Carbon Nitride Nanostructures Prepared by Surface Treatments

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: J.H. Hong, Chonbuk National University, Korea
Authors: J.H. Hong, Chonbuk National University, Korea
S.H. Kim, Chonbuk National University, Korea
S. Lee, Chonbuk National University, Korea
Y.B. Hahn, Chonbuk National University, Korea
Correspondent: Click to Email
Nano-dots and nano-stripes of carbon nitride (CNX) were fabricated by surface treatment. Amorphous CNX thin films grown on Si (100) wafer by plasma enhanced chemical vapor deposition at room temperature were first treated by H2 plasma and then annealed at 200-300@degree@. The effects of surface treatments on chemical and structural properties of the films were investigated by Auger electron spectroscopy (AES), Fourier transform infrared sprectra(FT-IR). Well-defined nano-dots and nano-stripes were formed depending on temperature and treatment time. This was attributed to recombination of adatoms and rearrangement of film structure caused by surface energy change between the film and the substrate. The AES showed that the composition of the film is 90 at.% C and 9 at.% N. The FT-IR spectra showed the presence of C-N peak at 1260 cm-1 and C=N peak at 1640-1670 cm-1, respectively.