AVS 50th International Symposium
    Nanotubes Wednesday Sessions
       Session NT-WeP

Paper NT-WeP16
Fabrication of Top gated Single-Walled Carbon Nanotube Field Effect Transistor Utilizing Scanning Probe Lithography

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: S.H. Choi, SungKyunKwan University, Korea
Authors: S.H. Choi, SungKyunKwan University, Korea
J. Heo, SungKyunKwan University, Korea
W.B. Choi, Samsung Advanced Institute of Technology, Korea
I.S. Chung, SungKyunKwan University, Korea
Correspondent: Click to Email
We attempted to fabricate top gated single wall carbon nanotube field effect transistor(SWNT FET) utilizing scanning probe lithography(SPL) method. In SPL, electrons induce chemical reactions at the desired position during scanning. Thus, gate electrode as well as source/drain formation would be done using lift-off method without using e-beam lithography. N type or p type FET can be formed according whether the oxygen annealing process is given or not. Thus, we can easily form an inverter based on top gate structure. In this study, SWNTs were dispersed on pre-patterned substrate prior to deposit top gate oxide. Our device shows excellent electric characteristics by thinner gate oxide.