AVS 50th International Symposium
    Nanotubes Wednesday Sessions
       Session NT-WeP

Paper NT-WeP14
Modification of Contact Resistance by Nano-bonding and Thermal Treatment

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: Y.D. Park, CSNS and Seoul National University, Korea
Authors: S. Lee, CSNS and Seoul National University, Korea
H.J. Chung, CSNS and Seoul National University, Korea
J.-Y. Park, Cornell University
Y.S. Cho, CSNS and Seoul National University, Korea
Y.D. Park, CSNS and Seoul National University, Korea
J.H. Choi, CSNS and Seoul National University, Korea
Y. Kuk, CSNS and Seoul National University, Korea
Correspondent: Click to Email
When we connect a nano-structure with conducting wires, we face difficulty fabricating them around ultra-fine and dense nanostructures. In order to use nanotubes or nanowires as interconnection materials, the contact resistance should be controllable because it may become main noise and dissipation sources with this low electrical current signal. In this study, the variation of the contact resistance in the carbon nanotubes (2-8 nm) on Au electrodes was investigated. The contact resistance between a nanotube and a electrode was changed the nanometer sized dots of Au and Ni formed by the field evaporation of the metals coated cantilever using atomic force microscopy (AFM) combined with a thermal treatment of 400-500 °C by a rapid thermal annealing (RTA). By using this method, the contact resistance of ~100 k@ohm@ is routinely produced despite of the geometry of nanotubes. This method can be used to other transport experiments to be required to modify the contact resistance.