AVS 50th International Symposium
    Nanotubes Wednesday Sessions
       Session NT-WeP

Paper NT-WeP12
Field Emission Properties of Carbon Nanotubes Relative to Buffer Layer

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: C.-M. Hsu, Industrial Technology Research Institute, Taiwan
Authors: C.-M. Hsu, Industrial Technology Research Institute, Taiwan
S.-C. Kung, Industrial Technology Research Institute, Taiwan
B.-J. Li, Industrial Technology Research Institute, Taiwan
H.-J. Lai, Industrial Technology Research Institute, Taiwan
Correspondent: Click to Email
Effect of field emission and growth of carbon nanotubes use various buffer layers Carbon nanotubes (CNTs) were synthesized with various buffer layers by electron cyclotron resonance chemical vapor deposition (ECR-CVD) and microwave plasma chemical vapor deposition (MPCVD) system. Growth was performed in a flowing mixture of H@sub2@, CH@sub4@ and N@sub2@ as precursors at temperature 600°C and -200 V substrate bias, sputter Co as catalysts material. The preliminary results indicate that well-aligned carbon nanotubes show significant emission current. Field emission property of carbon nanotubes and buffer layers relationship will be compared. Field emission scanning electron microscopy (FESEM) shows that the CNTs are well aligned with high aspect ratio and growth direction vertical to the substrate. The field emission properties of CNTs and buffer layers relationship will be characterized by I-V measurement, XRD, TEM, and RAMAN.