AVS 50th International Symposium
    Nanometer Structures Tuesday Sessions
       Session NS-TuP

Paper NS-TuP19
Lithographic Patterning using Near-field Scanning Optical Microscopy

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: R.E. Hollingsworth, ITN Energy Systems, Inc
Authors: R.E. Hollingsworth, ITN Energy Systems, Inc
C. Veauvy, Colorado School of Mines
M. Treaster, Colorado School of Mines
J.D. Beach, Colorado School of Mines
R.T. Collins, Colorado School of Mines
Correspondent: Click to Email
We report the development of a near-field scanning optical microscope (NSOM) designed specifically for direct write lithography on 4" substrates. Direct write lithography is ideally suited to research use where rapid turn around, flexible pattern generation and much lower cost than production tools are very important. At present, electron beam lithography is the most commonly used direct write technique , although scanning probe microscopes are receiving increasing attention. The advantages of NSOM lithography over these other direct write approaches are the ability to use conventional optical photoresists and to combine near-field with far-field optical exposure. As an optical technique, NSOM also avoids concerns of high-energy electron damage and vacuum compatibility inherent to e-beam lithography. Our approach uses state of the art mechanical translation stages that take steps a fraction of the typical NSOM resolution. This allows patterning over typical wafer dimensions with none of the stitching errors inherent in other techniques. The microscope also functions in standard NSOM characterization modes allowing, for example, nanoscale topography and reflectance to be measured and used in feature characterization and pattern registration. In this presentation, we will discuss the microscope design, performance tests, and photoresist process development for 100nm scale features and for pattern transfer into substrates and films. Microscope use in example applications such as quantum point contacts, surface plasmon enhanced near-field optics, and nucleation sites for seeded film growth will be presented.