AVS 50th International Symposium
    Nanometer Structures Tuesday Sessions
       Session NS-TuP

Paper NS-TuP15
Tomographic Reconstruction of Doping Profile and Device Structure in Si MOSFET Devices with a sub 10 nm Spatial Resolution

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: R.K. Bansal, University of Virginia
Authors: R.K. Bansal, University of Virginia
J.M. Fitz-Gerald, University of Virginia
R. Hull, University of Virginia
D.H. Anjum, University of Virginia
Correspondent: Click to Email
Due to a phenomenal reduction is the size of semiconductor devices over the last two decades there is a need to develop better characterization methods which can probe the devices in three dimensions with a high spatial resolution. The present work aims at tomographic reconstruction of the device structure and doping profile in semiconductor devices with sub-10 nm resolution. This involves using a Focused Ion Beam (FIB) to sputter away layers of atoms and subsequently image the cross-section of the device using a high resolution scanning electron microscope (SEM). This process is repeated, followed by concatenation of these images in the computer, to obtain a three dimensional reconstruction of the device. The SEM used for this work is the state-of-the-art JEOL 6700F field emission SEM which has a spatial resolution of 1nm. Also under investigation is the possibility of observing the spatial dopant distribution in the device and the enhancement of the doping contrast by using hydrogen surface passivation. This study is currently being done on short channel length (50nm -1µm) MOSFETs with strained and unstrained Si channel and can be extended to other devices and material systems.