AVS 50th International Symposium
    Nanometer Structures Tuesday Sessions
       Session NS-TuP

Paper NS-TuP10
Nanopatterning of Hydrogen Silsesquioxane Resist

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: M.J. Word, University of Illinois at Urbana-Champaign
Authors: M.J. Word, University of Illinois at Urbana-Champaign
I. Adesida, University of Illinois at Urbana-Champaign
Correspondent: Click to Email
Creating nano-scaled structures in semiconductor materials generally begins with the use of high-resolution lithography techniques and resists. Electron beam lithography is capable of creating isolated structures less than 10 nm in width when utilized with high-resolution resists such as hydrogen silsesquioxane (HSQ).@footnote 1@ In addition to these isolated structures, it is also important to characterize the resist when more complex and denser structures are required. In our study we characterized the resolution of HSQ resist in the form of densely packed gratings. We began by examining the surface of very thin films of HSQ resist down to a thicknesses of 100 Å in order to determine the limits for successful processing using lithography techniques. Using a JEOL JBX-6000FS electron beam lithography machine operating at 50 kV with a current of 20 pA, we then exposed samples of HSQ at various film thicknesses with gratings having periods as small as 20 nm. We use the results to characterize the resolution limits of HSQ with respect to film thickness, dosing, and grating periodicity. In addition, we discuss the transfer of nanometer-scale patterns into InP and other semiconductor materials with exposed HSQ gratings acting as the etch mask. @FootnoteText@ @footnote 1@ H. Namatsu, J. Vac. Sci. Technol. B 19, 2709 (2001). .